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Surface Properties of Binary and Multicomponent Semiconductors of the GaSb–ZnTe System. Regularities of Their Change
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques ( IF 0.5 ) Pub Date : 2021-06-25 , DOI: 10.1134/s1027451021030277
I. A. Kirovskaya , L. V. Novgorodtseva , O. V. Kropotin , Yu. I. Matyash

Abstract

Based on analysis and generalization of the results of studies of the surface (acid-base and adsorption) properties of components of the GaSb–ZnTe system, the regularities of their changes with varying composition are established; it is found that they may both obey Vegard’s rule (exhibit a smooth character) and deviate from it (exhibit an extreme character). The reasons for the appearance of extrema in the property–composition diagrams are explained. Correlations between the surface and bulk properties are found, which are useful not only in scientific but also in practical aspects. The absorbents that are the most active with respect to NH3, CO, and O2 are identified; it is proposed to use them for manufacturing corresponding sensors. The possibility and feasibility of using the results obtained for semiconductor gas analysis are shown.



中文翻译:

GaSb-ZnTe 系统的二元和多组分半导体的表面特性。变化规律

摘要

基于对GaSb-ZnTe体系组分表面(酸碱和吸附)性质研究结果的分析和概括,建立了它们随成分变化的变化规律;发现它们既可能遵守 Vegard 规则(表现出平滑的性格),也可能背离它(表现出极端的性格)。解释了在性质-组成图中出现极值的原因。发现了表面和体积特性之间的相关性,这不仅在科学方面而且在实践方面都很有用。对 NH 3、CO 和 O 2最活跃的吸收剂被识别;建议将它们用于制造相应的传感器。显示了将所得结果用于半导体气体分析的可能性和可行性。

更新日期:2021-06-25
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