Substrate integrated waveguide (SIW) technology has immense applications for the design of microwave components and devices. In this paper, a low loss substrate integrated waveguide (SIW) structure is designed, fabricated and experimentally tested to exploit in S band and C band applications. SIW structures are constructed by interconnecting parallel metallic surfaces with two rows of metallic vias embedded in a dielectric material. In comparison with rectangular waveguides, SIW inherits better wave guiding characteristics. Substrate integrated waveguides feature a lightweight, minimal-loss, versatile, and cost-effective approach for circuit component integration over the same substrate. The presented SIW structure is designed using RT/Duroid 5880 material, which has dielectric constant, ε_r = 2.2, dissipation factor, tan δ = 4 × 10⁻⁴ and height h = 0.508 mm. The insertion and return losses measured using vector network analyzer are 0.95 dB and 23 dB, respectively. Simulated and measured results are in close agreement with each other with slight variation. The insertion loss (S₂₁) and return loss (S₁₁) have uncertainty values of 0.51 dB and 2 dB, respectively. Suggestions for future research are also presented with an emphasis on the use of advanced materials in SIW systems for high-frequency applications with limited losses.

衬底集成波导 (SIW) 技术在微波元件和器件的设计中具有广泛的应用。在本文中，设计、制造和实验测试了一种低损耗衬底集成波导 (SIW) 结构，以在 S 波段和 C 波段应用中进行开发。SIW 结构是通过将平行金属表面与嵌入介电材料中的两行金属通孔互连来构建的。与矩形波导相比，SIW 继承了更好的波导特性。基板集成波导具有重量轻、损耗最小、通用且具有成本效益的方法，可在同一基板上集成电路组件。所提出的 SIW 结构是使用 RT/Duroid 5880 材料设计的，该材料具有介电常数ε _r = 2.2，损耗因数，tan δ  = 4 × 10 ^-4和高度h  = 0.508 mm。使用矢量网络分析仪测得的插入损耗和回波损耗分别为 0.95 dB 和 23 dB。模拟和测量结果彼此非常吻合，略有差异。插入损耗 ( S ₂₁ ) 和回波损耗 ( S ₁₁ ) 的不确定度值分别为 0.51 dB 和 2 dB。还提出了对未来研究的建议，重点是在 SIW 系统中使用先进的材料，用于具有有限损耗的高频应用。