In this work, for the first time, the Plasma-enhanced chemical vapor deposition (PECVD) method was used for the direct one-stage synthesis of the IR-transparent amorphous chalcogenide films of the binary As–S system doped with ions of the rare-earth element—ytterbium. RF (40 MHz) inductively coupled low-temperature non-equilibrium plasma discharge was utilized for the initiation of chemical interactions between precursors. High-pure arsenic monosulfide, sulfur, and elemental ytterbium were the initial substances. The reactive species formed in the gas phase were studied in-situ by the Optical emission spectroscopy technique. It was proved that the PECVD method allows fabrication of the film in the wide range of Yb concentrations: the ytterbium content in the films was varied in the range of 1–7 at%. Dependence of structural, optical properties, and intensity of the photoluminescence on the composition of the films was also studied.

在这项工作中，等离子体增强化学气相沉积 (PECVD) 方法首次用于直接一步合成掺有稀有离子的二元 As-S 系统的红外透明非晶硫属化物薄膜。 -地球元素——镱。RF (40 MHz) 电感耦合低温非平衡等离子体放电用于引发前体之间的化学相互作用。高纯一硫化二砷、硫和元素镱是初始物质。在气相中形成的反应性物种通过光学发射光谱技术进行原位研究。事实证明，PECVD 方法允许在很宽的 Yb 浓度范围内制造薄膜：薄膜中的镱含量在 1-7 原子％的范围内变化。结构、光学特性的依赖性，