Abstract
In this work, for the first time, the Plasma-enhanced chemical vapor deposition (PECVD) method was used for the direct one-stage synthesis of the IR-transparent amorphous chalcogenide films of the binary As–S system doped with ions of the rare-earth element—ytterbium. RF (40 MHz) inductively coupled low-temperature non-equilibrium plasma discharge was utilized for the initiation of chemical interactions between precursors. High-pure arsenic monosulfide, sulfur, and elemental ytterbium were the initial substances. The reactive species formed in the gas phase were studied in-situ by the Optical emission spectroscopy technique. It was proved that the PECVD method allows fabrication of the film in the wide range of Yb concentrations: the ytterbium content in the films was varied in the range of 1–7 at%. Dependence of structural, optical properties, and intensity of the photoluminescence on the composition of the films was also studied.
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The reported study was funded by RFBR, Sirius University of Science and Technology, JSC Russian Railways and Educational Fund “Talent and success”, Project Number 20-38-51003.
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Mochalov, L.A., Kudryashov, M.A., Logunov, A.A. et al. Plasma-Chemical Synthesis of Ytterbium Doped As–S Thin Films. Plasma Chem Plasma Process 41, 1661–1670 (2021). https://doi.org/10.1007/s11090-021-10190-7
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DOI: https://doi.org/10.1007/s11090-021-10190-7