The purpose of this paper is to investigate the nanoscale electric performance of NiO thin films in grain boundary and grain face.,PeakForce tunnel atomic force is applied to visualize the nanoscale current imaging of the NiO thin film on fluorine tin oxide substrate.,The results show that the grain boundary has a significant impact on the nanoscale current of the NiO film. The electronic conductivity and in grain boundary is higher than that of the NiO film in grain face. The width of the conductive zone in the NiO film over grain boundaries is ∼ 60 nm. The tunnel current between the tip and the NiO film is consistent with the Fowler–Nordheim tunnel model.,The higher tunnel current in grain boundary is probably attributed to the enhanced energy band bending and adhesion force.

中文翻译：

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用峰值力 TUNA 观察晶界中 NiO 薄膜的增强隧道电流

本文的目的是研究NiO薄膜在晶界和晶面的纳米级电学性能，应用PeakForce隧道原子力可视化氟氧化锡衬底上NiO薄膜的纳米级电流成像，结果表明晶界对NiO薄膜的纳米级电流有显着影响。晶界和晶界的电子电导率高于晶粒面的 NiO 膜。NiO 膜中晶界上导电区的宽度约为 60 nm。尖端和 NiO 薄膜之间的隧道电流与 Fowler-Nordheim 隧道模型一致。晶界中较高的隧道电流可能归因于增强的能带弯曲和粘附力。