Observation of the enhanced tunnel current of NiO thin films in grain boundary by peakforce TUNA
Microelectronics International
ISSN: 1356-5362
Article publication date: 28 May 2019
Issue publication date: 1 October 2019
Abstract
Purpose
The purpose of this paper is to investigate the nanoscale electric performance of NiO thin films in grain boundary and grain face.
Design/methodology/approach
PeakForce tunnel atomic force is applied to visualize the nanoscale current imaging of the NiO thin film on fluorine tin oxide substrate.
Findings
The results show that the grain boundary has a significant impact on the nanoscale current of the NiO film. The electronic conductivity and in grain boundary is higher than that of the NiO film in grain face. The width of the conductive zone in the NiO film over grain boundaries is ∼ 60 nm. The tunnel current between the tip and the NiO film is consistent with the Fowler–Nordheim tunnel model.
Originality/value
The higher tunnel current in grain boundary is probably attributed to the enhanced energy band bending and adhesion force.
Keywords
Acknowledgements
This work was financially supported by the scientific and technological project of Henan province, the National Natural Science Foundation of China and the Program for Innovative Research Team (in Science and Technology) inHenan University.
Citation
Zhang, Y. (2019), "Observation of the enhanced tunnel current of NiO thin films in grain boundary by peakforce TUNA", Microelectronics International, Vol. 36 No. 4, pp. 160-164. https://doi.org/10.1108/MI-02-2019-0008
Publisher
:Emerald Publishing Limited
Copyright © 2019, Emerald Publishing Limited