Terahertz radiation for inspection and fault detection has been of interest for the semiconductor industry since the first generation and detection of THz signals. Until recent hardware advances, THz systems lacked the signal quality and reliability for use as an effective nondestructive testing (NDT) method. Incremental advances in THz sources, detectors, and signal processing resulted in the successful applied-industrial use of THz NDT techniques on carbon fiber laminates, automotive coatings, and for detection of counterfeit pharmaceutical tablets. Semiconductor inspection and verification methods ensure the functionality and thereby safety of vital electronics for several critical industries. For this reason, the reliability and verification of a THz NDT method must exceed currently used inspection systems. With recent laboratory access to THz radiation, THz inspection methods are often compared with existing optical, electrical, and volumetric semiconductor verification techniques for their production monitoring and failure analysis viability. This review will cover THz techniques and their applications at the printed circuit board (PCB), integrated circuit (IC), and transistor/gate scales. The THz radiation gap spans between optical and electronic ranges with a millimeter-sized wavelength allowing for adequate penetration of plastic and ceramic and semiconductor materials. THz radiation can be used to determine structural features, electrical signatures in the THz range, and chemical information simultaneously. Cost and environmental limitations restricted the ability for THz NDT semiconductor inspection methods to escape the lab and succeed in the dynamic environment of a semiconductor fabrication environment. Hybridized metrology methods incorporating information from multiple inspection tools are a regime where THz spectral and structural data can be combined with existing methods such as optical, x-ray, or E-beam. THz can be used initially to offer support to the complex failure analysis and verification requirements of the semiconductor industry from nanoscale to macroscale features and components. For THz systems to become independent inspection tools used for semiconductor production monitoring, in the lab or fab, this will require a confident level of statistical process control for THz signal generation, detection, or processing. Applied industrial semiconductor device inspection will likely be a result of a combination of research into THz hardware, reconstruction techniques, and the widespread application of machine learning techniques. Many breakthroughs occurred over the years to enable successful nondestructive characterization and inspection of semiconductor devices from the nanoscale transistors to fully packaged integrated circuits and assembled PCBs.

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回顾基于太赫兹的半导体保证

自太赫兹信号的第一代和检测以来，用于检查和故障检测的太赫兹辐射一直是半导体行业的兴趣所在。在最近的硬件进步之前，太赫兹系统缺乏用作有效无损检测 (NDT) 方法的信号质量和可靠性。太赫兹源、探测器和信号处理方面的不断进步导致太赫兹无损检测技术在碳纤维层压板、汽车涂层和假药片检测方面的成功应用工业应用。半导体检查和验证方法可确保几个关键行业的重要电子产品的功能和安全性。因此，太赫兹无损检测方法的可靠性和验证必须超过当前使用的检测系统。随着最近实验室获得太赫兹辐射，太赫兹检测方法经常与现有的光学、电气和体积半导体验证技术进行比较，以了解它们的生产监控和故障分析可行性。本综述将涵盖太赫兹技术及其在印刷电路板 (PCB)、集成电路 (IC) 和晶体管/门级尺度上的应用。太赫兹辐射间隙跨越光学和电子范围，波长为毫米，允许塑料、陶瓷和半导体材料充分穿透。太赫兹辐射可用于同时确定结构特征、太赫兹范围内的电特征和化学信息。成本和环境限制限制了太赫兹 NDT 半导体检测方法脱离实验室并在半导体制造环境的动态环境中取得成功的能力。结合来自多种检测工具的信息的混合计量方法是一种可以将太赫兹光谱和结构数据与现有方法（例如光学、X 射线或电子束）相结合的方法。太赫兹最初可用于为半导体行业从纳米级到宏观级特征和组件的复杂故障分析和验证要求提供支持。太赫兹系统要成为实验室或晶圆厂中用于半导体生产监控的独立检测工具，就需要对太赫兹信号的生成、检测或处理进行可靠的统计过程控制。应用工业半导体设备检测很可能是对太赫兹硬件、重建技术和机器学习技术广泛应用的研究相结合的结果。多年来发生了许多突破，使从纳米级晶体管到完全封装的集成电路和组装的 PCB 的半导体器件的无损表征和检测成功成为可能。