Interlayer (IL) excitons, comprising electrons and holes residing in different layers of van der Waals bonded two-dimensional semiconductors, have opened new opportunities for room-temperature excitonic devices. So far, two-dimensional IL excitons have been realized in heterobilayers with type-II band alignment. However, the small oscillator strength of the resulting IL excitons and difficulties with producing heterostructures with definite crystal orientation over large areas have challenged the practical applicability of this design. Here, following the theoretical prediction and recent experimental confirmation of the existence of IL excitons in bilayer MoS₂, we demonstrate the electrical control of such excitons up to room temperature. We find that the IL excitonic states preserve their large oscillator strength as their energies are manipulated by the electric field. We attribute this effect to the mixing of the pure IL excitons with intralayer excitons localized in a single layer. By applying an electric field perpendicular to the bilayer MoS₂ crystal plane, excitons with IL character split into two peaks with an X-shaped field dependence as a clear fingerprint of the shift of the monolayer bands with respect to each other. Finally, we demonstrate the full control of the energies of IL excitons distributed homogeneously over a large area of our device.

层间 (IL) 激子，包括存在于范德华键合二维半导体不同层中的电子和空穴，为室温激子器件开辟了新的机遇。到目前为止，二维 IL 激子已经在具有 II 型能带排列的异质双层中实现。然而，由此产生的 IL 激子的小振荡器强度以及在大面积上产生具有明确晶体取向的异质结构的困难已经对这种设计的实际适用性提出了挑战。_{在这里，根据对双层 MoS 2}中 IL 激子存在的理论预测和最近的实验证实，我们展示了这种激子在室温下的电气控制。我们发现 IL 激子态保持其大的振荡器强度，因为它们的能量被电场操纵。我们将这种效应归因于纯 IL 激子与位于单层中的层内激子的混合。通过施加垂直于双层 MoS ₂晶面的电场，具有 IL 特性的激子分裂成两个峰，具有 X 形场依赖性，作为单层带相对于彼此移动的清晰指纹。最后，我们展示了对在我们设备的大面积上均匀分布的 IL 激子的能量的完全控制。