Gallium doped ZnO (GZO) top electrode thickness dependence of resistive switching characteristic of GZO/ZnO₂/ZnO/ITO transparent valence change memory device is investigated. The thickness of the GZO top electrode modulates the resistance of the pristine device. Devices made with thicker GZO layer have higher leakage current; thus, require higher current compliance. An excessively high current compliance leads to a device breakdown upon reset process. Conversely, a very low current compliance may form a tiny conducting filament and is difficult to rejuvenate after the rupture; thus, its cycle-to-cycle characteristic shows a decaying behavior. Nevertheless, transparent valence change devices with a stable endurance and sufficient memory window that operate at a moderate level of current compliance are successfully fabricated by employing an appropriate thickness of the top electrode. We suggest that a good switch-ability of transparent valence change memory devices are strongly affected by the thickness of the top electrode.

镓掺杂的 ZnO (GZO) 顶部电极厚度对 GZO/ZnO ₂电阻开关特性的依赖性研究了 /ZnO/ITO 透明价变存储器件。GZO 顶部电极的厚度调节原始器件的电阻。用较厚的 GZO 层制成的器件漏电流较高；因此，需要更高的电流合规性。过高的电流顺应性会导致器件在复位过程中发生故障。反之，极低的电流顺应性可能会形成细小的导电丝，断裂后难以恢复活力；因此，它的周期到周期特性显示出衰减行为。然而，通过采用适当厚度的顶部电极，成功地制造出具有稳定耐用性和足够存储窗口且在中等电流顺应性水平下运行的透明价变器件。