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Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in ZnO2/ZnO bilayer transparent valence change memory

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Abstract

Gallium doped ZnO (GZO) top electrode thickness dependence of resistive switching characteristic of GZO/ZnO2/ZnO/ITO transparent valence change memory device is investigated. The thickness of the GZO top electrode modulates the resistance of the pristine device. Devices made with thicker GZO layer have higher leakage current; thus, require higher current compliance. An excessively high current compliance leads to a device breakdown upon reset process. Conversely, a very low current compliance may form a tiny conducting filament and is difficult to rejuvenate after the rupture; thus, its cycle-to-cycle characteristic shows a decaying behavior. Nevertheless, transparent valence change devices with a stable endurance and sufficient memory window that operate at a moderate level of current compliance are successfully fabricated by employing an appropriate thickness of the top electrode. We suggest that a good switch-ability of transparent valence change memory devices are strongly affected by the thickness of the top electrode.

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Acknowledgments

This work was supported by the Ministry of Science and Technology, Taiwan, under project MOST 105-2811-E-259-002. D. Panda acknowledges to the DST-SERB, Govt. of India research grant to support (Grant no: SRG/2019/000129) for this work.

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Authors and Affiliations

  1. Department of Electrical Engineering, National Dong Hwa University, Hualien, 97401, Taiwan

    Firman Mangasa Simanjuntak & Chun-Chieh Lin

  2. Department of Electronics Engineering, National Institute of Science and Technology, Berhampur, Odisha, 761008, India

    Debashis Panda

  3. Department of Electrical Engineering and Computer Science, National Chiao Tung University, Hsinchu, 30010, Taiwan

    Sridhar Chandrasekaran

  4. Institute of Electronics, National Chiao Tung University, Hsinchu, 30010, Taiwan

    Rakesh Aluguri & Tseung-Yuen Tseng

Authors
  1. Firman Mangasa Simanjuntak
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  2. Debashis Panda
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  3. Sridhar Chandrasekaran
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  4. Rakesh Aluguri
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  5. Chun-Chieh Lin
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  6. Tseung-Yuen Tseng
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Correspondence to Chun-Chieh Lin or Tseung-Yuen Tseng.

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Simanjuntak, F.M., Panda, D., Chandrasekaran, S. et al. Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in ZnO2/ZnO bilayer transparent valence change memory. J Electroceram 46, 14–19 (2021). https://doi.org/10.1007/s10832-021-00239-6

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  • DOI: https://doi.org/10.1007/s10832-021-00239-6

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