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Growth of KR 3F10 (R = Tb–Er) Crystals by the Vertical Directional Crystallization Technique. I: Optimization of the Melt Composition for the Growth of KTb3F10 and Correction of the Phase Diagram of the KF–TbF3 System
Crystallography Reports ( IF 0.6 ) Pub Date : 2021-05-25 , DOI: 10.1134/s1063774521030081
D. N. Karimov , I. I. Buchinskaya

Abstract

KTb3F10 crystals have been grown from the melt by the vertical directional crystallization. The incongruent character of melting of this compound is confirmed experimentally. Corrections are introduced into the phase diagram of the KF–TbF3 system. It is found that the optimal pre-peritectic composition for the KTb3F10 crystal growth corresponds to a KF content of 27.5 ± 0.5 mol % in melt. The KTb3F10 composition is a part of a nonstoichiometric phase of variable composition. The cubic (sp. gr. \(Fm\bar {3}m\)) lattice parameters are limited to the range from 11.679(1) to 11.663(1) Å.



中文翻译:

通过垂直定向结晶技术生长KR 3F10(R = Tb–Er)晶体。I:KTb3F10生长的熔体组成的优化和KF–TbF3系统相图的校正

摘要

通过垂直定向结晶从熔体中生长出KTb 3 F 10晶体。通过实验证实了该化合物熔融的不一致特征。校正被引入到KF–TbF 3系统的相图中。发现用于KTb 3 F 10晶体生长的最佳包晶前组成对应于熔体中的KF含量为27.5±0.5 mol%。KTb 3 F 10组成是可变组成的非化学计量相的一部分。三次(sp。gr。\(Fm \ bar {3} m \))晶格参数限制在从11.679(1)到11.663(1)Å的范围内。

更新日期:2021-05-25
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