Al-doped ZnO (AZO) thin films have been deposited onto the glass substrate via sol–gel spin coating method with different Al concentrations (0, 2, 4, 6, 8, 10 at.%). The growth orientation and crystalline structure were investigated by studying the X-ray diffraction (XRD) pattern. The XRD results reveal that the thin films show wurtzite phase with preferential orientation along the c-axis (002) plane for lower concentration of Al. The diffraction peak gets weaker corresponding to plane (002) and the diffraction peaks of planes (101) and (100) become stronger with higher concentration of Al content. The field emission scanning electron microscopy (FE-SEM) images confirm that thin films show wrinkle-type structure with a few minor cracks. The transmittance spectra of thin films were recorded by UV–Vis spectrophotometer in the wavelength range 350–800 nm. The optical transmittance of thin films was found to be above 85%. The band-gap energy of AZO films varies from 3.16 eV to 3.27 eV with increasing concentration of Al. The better conductivity and high optical transparency of AZO films make them a more promising alternative to indium-doped tin oxide (ITO) for optoelectronic applications.

铝掺杂的ZnO（AZO）薄膜已通过溶胶-凝胶旋涂法以不同的铝浓度（0、2、4、6、8、10 at。％）沉积到玻璃基板上。通过研究X射线衍射（XRD）模式研究了生长取向和晶体结构。X射线衍射（XRD）结果表明，薄膜呈纤锌矿相，沿c方向优先取向轴（002）平面以降低Al的浓度。随着Al含量的增加，与（002）面对应的衍射峰变弱，（101）和（100）面的衍射峰变强。场发射扫描电子显微镜（FE-SEM）图像证实薄膜显示出皱纹型结构，并带有一些小裂纹。紫外-可见分光光度计在350-800 nm波长范围内记录薄膜的透射光谱。发现薄膜的透光率高于85％。随着Al浓度的增加，AZO薄膜的带隙能在3.16 eV至3.27 eV之间变化。AZO薄膜具有更好的导电性和较高的光学透明度，使其成为光电子应用中铟掺杂二氧化锡（ITO）的更有希望的替代品。