Abstract

The structure and magnetization of polycrystalline Zn_1−xMn_xO₃ films (\(0 \le x \le 0.1)\) grown on glass and Si substrates using Sol–Gel technique have been studied. The average grain sizes of between 20 and 30 nm for nano-sphere structured polycrystalline samples grown on the glass substrate have been obtained in a result of X-ray diffraction analysis. Changes in the structural parameters by the increase in Mn content have been observed. Average grain sizes and porosities of the samples have been obtained from SEM studies. It has been revealed that the films grown on glass substrates did not exhibit ferromagnetic order even after thermal treatment. On the contrary, Zn_1−xMn_xO₃ films with Mn contents of x = 0.05 and 0.10 grown on Si substrate exhibited ferromagnetic properties after thermal annealing. This phenomenon has been interpreted on the base of the existence of carrier mediated magnetic ordering in Zn_1−xMn_xO₃ diluted magnetic semiconductors. In a result, a procedure of thermal treatment is suggested for achieving of the room temperature ferromagnetism in Mn doped ZnO films synthesized on p-type Si substrates for their applications as magnetic semiconductor material in spintronic devices.

Graphic abstract

中文翻译：

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使用Sol–Gel技术在玻璃和p型Si衬底上合成的多晶Zn 1-x Mn x O薄膜的结构和磁性

摘要

研究了使用Sol–Gel技术在玻璃和Si衬底上生长的多晶Zn _{1 -x} Mn _x O ₃薄膜（\（0 \ le x \ le 0.1）\）的结构和磁化强度。X射线衍射分析的结果表明，在玻璃基板上生长的纳米球结构多晶样品的平均晶粒尺寸在20至30 nm之间。已经观察到由于Mn含量的增加而导致的结构参数的变化。样品的平均晶粒尺寸和孔隙率已通过SEM研究获得。已经发现，即使在热处理之后，在玻璃基板上生长的膜也没有表现出铁磁有序。相反，Zn _{1− x} Mn 在Si衬底上生长的Mn含量为x = 0.05和0.10的_x O ₃膜在热退火后表现出铁磁性能。该现象已基于稀释的Zn _{1- x} Mn _x O ₃磁性半导体中载流子介导的磁有序性进行了解释。结果，提出了一种热处理程序，以实现在p型Si衬底上合成的Mn掺杂的ZnO薄膜中实现室温铁磁性，并将其用作自旋电子器件中的磁性半导体材料。

图形摘要