In this paper, a T gate head AlGaN/GaN high-electron-mobility transistor (HEMT) on BGO substrate is proposed and optimization is done for channel length, gate length and gate position. The dc and ac characteristics of the devices under consideration are analysed using Silvaco TCAD software. The threshold voltage and transconductance of the proposed HEMT are extracted from the DC characteristics. The unity gain cut-off frequency (f_T) and maximum oscillation frequency (f_max) are analysed for comparing the radio frequency characteristics. The T gate AlGaN/GaN HEMT on BGO substrate with channel length of 200 nm, gate length of 20 nm, gate source distance of 100 nm and gate drain distance of 80 nm exhibits optimum values for f_T and f_max of 265 GHz and 900 GHz. The RF performance of the optimized device is compared with other related recent technologies and found that the proposed device is superior among them.

本文提出了一种在BGO衬底上的T型栅头AlGaN / GaN高电子迁移率晶体管（HEMT），并对沟道长度，栅长和栅位置进行了优化。使用Silvaco TCAD软件分析了所考虑设备的直流和交流特性。从直流特性中提取提出的HEMT的阈值电压和跨导。分析了单位增益截止频率（f _T）和最大振荡频率（f _max），以比较射频特性。沟道长度为200 nm，栅极长度为20 nm，栅极源极距离为100 nm，栅极漏极距离为80 nm的BGO衬底上的T栅极AlGaN / GaN HEMT表现出f _T的最佳值和f _max分别为265 GHz和900 GHz。将经过优化的设备的RF性能与其他相关的最新技术进行比较，发现所提出的设备在其中尤为出色。