This short paper proposes a circuit configuration to emulate the hard-switching behaviour of a grounded flux-controlled incremental/decremental memristor, based on current follower with externally controllable terminal intrinsic resistor. The circuits use a single grounded capacitor which benefits from the integrated circuit (the MOS-capacitance can be used instead of the capacitor when the simulator circuits are operated in the high frequency region) and has a single active component matching constraint. The realized emulator circuits do not utilise a multiplier circuit, biasing current or voltage source, and is free of body effect for all transistors. The emulation circuit has been verified by executing simulations using CMOS 0.18µ m process technique under PSPICE environment.

这篇简短的论文提出了一种电路配置，该电路配置基于带外部可控端子本征电阻的电流跟随器来模拟接地磁通量控制的增量/减量忆阻器的硬开关行为。电路使用单个接地电容器，该电容器得益于集成电路（当模拟器电路在高频区域中工作时，可以使用MOS电容代替电容器），并且具有单个有源组件匹配约束。所实现的仿真器电路不使用乘法器电路，偏置电流或电压源，并且对所有晶体管都没有体效应。该仿真电路已通过在PSPICE环境下使用CMOS 0.18µm工艺技术进行仿真来验证。