This work evaluates the Soft Error sensitivity of the complete SRAM architecture using the 16 nm Bulk CMOS technology model. The paper investigated the fault propagation in cells and bitlines during the Hold, Read, Write operations, and the half-selection situation. The 6T, 8T, 9T, 8TSER, and DICE SRAM cells are compared not only about the radiation effects but also observing the timing, power, and static noise margin outcomes. DICE cell presents the highest robustness to the radiation effects. The 8T-SER presented the best stability results. The half-selection situation shows the potential to increase the cell sensitivity by \(\approx\) 50 \(\%\) compared to the Hold perspective.

这项工作使用16 nm Bulk CMOS技术模型评估了完整SRAM体系结构的软错误敏感性。本文研究了在保持，读取，写入操作和半选择情况下，故障在单元和位线中的传播情况。比较了6T，8T，9T，8TSER和DICE SRAM单元的辐射效应，还观察了时序，功率和静态噪声容限结果。DICE电池对辐射的影响表现出最高的鲁棒性。8T-SER表现出最佳的稳定性结果。与“保留”透视图相比，半选择情况显示了将单元格灵敏度提高\（\ approx \） 50 \（\％\）的潜力。