Abstract

The paper reports the results of investigation of the pore growth during anodic etching of (111)-oriented wafers of Si-doped n-GaAs in an environmentally friendly NaCl based electrolyte, with switching the applied voltage from a high voltage to lower one and vice-versa. Switching of the applied voltage in the process of anodization was found to cause the formation of layered porous structures with different degrees of porosity. Crystallographically oriented pores shaped as triangular prisms were produced in a stationary regime of anodization, while a more complex morphology of pores was observed at the interface between the two layers with different degrees of porosity, including pores composed of three circular ones. Based on the results of the morphology study using scanning electron microscopy, a possible mechanism of the formation of such kind of pores in the dynamic transitory regime of anodizing is discussed.

中文翻译：

---

瞬态阳极氧化过程中GaAs孔隙生长从一种施加电压到另一种施加电压的演变

摘要

该论文报道了在阳极腐蚀过程中对掺杂硅的n的（111）取向晶片进行孔腐蚀的研究结果。-GaAs是一种环保型基于NaCl的电解质，将施加的电压从高电压切换到低电压，反之亦然。发现在阳极氧化过程中施加电压的切换导致形成具有不同孔隙度的层状多孔结构。在固定的阳极氧化条件下产生了晶体取向的形状为三棱柱的孔，而在具有不同孔隙度的两层之间的界面处观察到了更复杂的孔形态，包括由三个圆形孔组成的孔。基于使用扫描电子显微镜进行的形态学研究的结果，讨论了在阳极氧化的动态过渡状态下形成此类孔的可能机制。