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Measurement of Lattice Distortion in NbTaTiV and NbTaTiVZr Using Electron Microscopy
Metallurgical and Materials Transactions A ( IF 2.2 ) Pub Date : 2021-03-22 , DOI: 10.1007/s11661-021-06215-7
Yi Chou , Chanho Lee , Peter K. Liaw , Yi-Chia Chou

High annular angle dark field-scanning transmission electron microscopy (HAADF-STEM) was used to directly measure the lattice distortion of NbTaTiV and NbTaTiVZr by fitting the images with a two-dimensional (2-D) Gauss function. The effect of the scanning direction and the accuracy of the HAADF-STEM method were discussed, and the lattice distortion factors in NbTaTiV and NbTaTiVZr were 0.113 and 0.155 Å, respectively.



中文翻译:

使用电子显微镜测量NbTaTiV和NbTaTiVZr中的晶格畸变

高圆角暗场扫描透射电子显微镜(HAADF-STEM)用于通过使图像具有二维(2-D)高斯函数拟合来直接测量NbTaTiV和NbTaTiVZr的晶格畸变。讨论了扫描方向的影响和HAADF-STEM方法的准确性,NbTaTiV和NbTaTiVZr中的晶格畸变因子分别为0.113和0.155Å。

更新日期:2021-05-03
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