High annular angle dark field-scanning transmission electron microscopy (HAADF-STEM) was used to directly measure the lattice distortion of NbTaTiV and NbTaTiVZr by fitting the images with a two-dimensional (2-D) Gauss function. The effect of the scanning direction and the accuracy of the HAADF-STEM method were discussed, and the lattice distortion factors in NbTaTiV and NbTaTiVZr were 0.113 and 0.155 Å, respectively.

中文翻译：

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使用电子显微镜测量NbTaTiV和NbTaTiVZr中的晶格畸变

高圆角暗场扫描透射电子显微镜（HAADF-STEM）用于通过使图像具有二维（2-D）高斯函数拟合来直接测量NbTaTiV和NbTaTiVZr的晶格畸变。讨论了扫描方向的影响和HAADF-STEM方法的准确性，NbTaTiV和NbTaTiVZr中的晶格畸变因子分别为0.113和0.155Å。