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Measurement of Lattice Distortion in NbTaTiV and NbTaTiVZr Using Electron Microscopy

  • Topical Collection: Innovations in High Entropy Alloys and Bulk Metallic Glasses
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Abstract

High annular angle dark field-scanning transmission electron microscopy (HAADF-STEM) was used to directly measure the lattice distortion of NbTaTiV and NbTaTiVZr by fitting the images with a two-dimensional (2-D) Gauss function. The effect of the scanning direction and the accuracy of the HAADF-STEM method were discussed, and the lattice distortion factors in NbTaTiV and NbTaTiVZr were 0.113 and 0.155 Å, respectively.

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  • 26 March 2021

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Acknowledgments

The authors acknowledge funding from the Ministry of Science and Technology of Taiwan under Grant No. MOST-110-2363-M-009-008 and core facility support in National Yang Ming Chiao Tung University (NYCU) from MOST. The present work was partially supported by the “Center for Semiconductor Technology Research” from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan and supported, in part, by the Ministry of Science and Technology, Taiwan, under Grant No. MOST 109-2634-F-009-029.

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Authors and Affiliations

  1. Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan

    Yi Chou & Yi-Chia Chou

  2. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA

    Chanho Lee

  3. Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN, 37996-2100, USA

    Peter K. Liaw

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  1. Yi Chou
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  2. Chanho Lee
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Correspondence to Yi-Chia Chou.

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Manuscript submitted September 10, 2020, accepted February 23, 2021.

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Chou, Y., Lee, C., Liaw, P.K. et al. Measurement of Lattice Distortion in NbTaTiV and NbTaTiVZr Using Electron Microscopy. Metall Mater Trans A 52, 2094–2099 (2021). https://doi.org/10.1007/s11661-021-06215-7

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