Information on the temperature coefficient of linear expansion (TCLE) of materials based on silicon carbide is presented. It is shown that the different polytypes 3C (cubic modification) and 4H and 6H (hexagonal modifications) are characterized by different thermal expansions, the difference between the values of which increases with increasing temperature. The TCLEs of reaction-sintered, liquid-phase-sintered, and hot-pressed silicon carbide materials are determined in the range 20 – 1800°C.

中文翻译：

---

基于碳化硅的材料线膨胀温度系数的确定

介绍了有关基于碳化硅的材料的线性膨胀温度系数（TCLE）的信息。结果表明，不同的多型体3C（立方晶型）和4H和6H（六方晶型）的特征在于不同的热膨胀，其热值之间的差异随着温度的升高而增加。反应烧结，液相烧结和热压碳化硅材料的TCLE在20 – 1800°C的范围内确定。