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Determination of the Temperature Coefficient of Linear Expansion of Materials Based on Silicon Carbide

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Refractories and Industrial Ceramics Aims and scope

Information on the temperature coefficient of linear expansion (TCLE) of materials based on silicon carbide is presented. It is shown that the different polytypes 3C (cubic modification) and 4H and 6H (hexagonal modifications) are characterized by different thermal expansions, the difference between the values of which increases with increasing temperature. The TCLEs of reaction-sintered, liquid-phase-sintered, and hot-pressed silicon carbide materials are determined in the range 20 – 1800°C.

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Authors and Affiliations

  1. I. V. Grebenshchikov Institute of Silicate Chemistry, Russian Academy of Sciences, St. Petersburg, Russia

    S. N. Perevislov

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  1. S. N. Perevislov
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Correspondence to S. N. Perevislov.

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Translated from Novye Ogneupory, No. 11, pp. 44 – 49, November, 2020.

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Perevislov, S.N. Determination of the Temperature Coefficient of Linear Expansion of Materials Based on Silicon Carbide. Refract Ind Ceram 61, 665–670 (2021). https://doi.org/10.1007/s11148-021-00539-y

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  • DOI: https://doi.org/10.1007/s11148-021-00539-y

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