High-performance sub-10-nm field-effect transistors (FETs) are considered to be a prerequisite for the development of nanoelectronics and modern integrated circuits. Herein, new band-to-band tunneling (BTBT) junctionless (JL) graphene nanoribbon field-effect transistors (GNRFETs) endowed with sub-10-nm gate length are proposed using a quantum transport simulation. The nonequilibrium Green’s function (NEGF) formalism is used in quantum simulations considering the self-consistent electrostatics and the ballistic transport limit. The computational assessment includes the I_DS–V_GS transfer characteristics, the potential and electron density distributions, the current spectrum, the ambipolar behavior, the leakage current, the subthreshold swing, the current ratio, and the scaling capability. It is found that BTBT JL-GNRFETs can provide subthermionic subthreshold swings and moderate current ratios for sub-10-nm gate lengths. Moreover, a new doping profile, based on the use of lateral lightly n-type-doped pockets, is adopted to boost their performance. The numerical results reveal that BTBT JL-GNRFETs with the proposed doping profile can exhibit improved performance in comparison with uniformly doped BTBT JL-GNRFETs. In addition, the role of the length and n-type doping concentration of the pockets in boosting the device performance is also studied and analyzed while considering the scaling capability of such devices, revealing that low doping concentrations and long pocket lengths are useful for performance improvement. The merits of the BTBT JL-GNRFETs based on the proposed nonuniform doping profile, namely sub-10-nm scale, steep subthermionic subthreshold swing, low leakage current, and improved current ratio and ambipolar behavior, make them promising nanodevices for use in modern nanoelectronics and high-performance integrated circuits.

高性能低于10纳米的场效应晶体管（FET）被认为是纳米电子学和现代集成电路发展的先决条件。在此，使用量子传输模拟提出了具有小于10nm栅极长度的新型带间隧道（BTBT）无结（JL）石墨烯纳米带场效应晶体管（GNRFET）。考虑到自洽静电和弹道输运极限，非平衡格林函数（NEGF）形式主义用于量子模拟。计算评估包括I _DS – V _GS传输特性，电势和电子密度分布，电流谱，双极性行为，泄漏电流，亚阈值摆幅，电流比和缩放能力。发现BTBT JL-GNRFET可以为亚10纳米栅极长度提供亚热电子亚阈值摆幅和适中的电流比。此外，基于使用侧向轻度n型掺杂的袋，采用了新的掺杂轮廓以提高其性能。数值结果表明，与均匀掺杂的BTBT JL-GNRFET相比，具有建议的掺杂分布的BTBT JL-GNRFET可以表现出更高的性能。另外，长度和n的作用在考虑此类器件的缩放能力的同时，还研究和分析了在提高器件性能方面的口袋型掺杂浓度，这表明低掺杂浓度和较长的口袋长度对于性能改善是有用的。BTBT JL-GNRFET基于建议的非均匀掺杂分布的优点，即亚10纳米级，陡峭的亚热电子亚阈值摆幅，低泄漏电流以及改善的电流比和双极性行为，使其成为有希望用于现代纳米电子学的纳米器件和高性能集成电路。