Abstract

It is shown that thermal doping of SiO₂ film with phosphorus, which leads to the formation of a thin film of phosphosilicate glass on its surface, makes it possible to increase the charge stability of the gate dielectric of MIS structures. It is established that the presence of a film of phosphosilicate glass makes it possible to significantly reduce local injection currents flowing in defective areas owing to the capture of electrons by traps in a film of glass, leading to an increase in the energy barrier. As a result, the number of structures that break down at low values of the charge injected into the dielectric under high-field influences significantly decreases. It is shown that, in a film of phosphosilicate glass, the heating of injected electrons decreases, which also leads to an increase in the charge stability of the gate dielectric under high-field injection effects.

中文翻译：

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通过掺杂磷来提高MIS结构的栅极介电膜的电荷稳定性

摘要

结果表明，SiO _2的热掺杂含磷的磷薄膜，导致在其表面形成磷硅酸盐玻璃薄膜，可以提高MIS结构的栅极电介质的电荷稳定性。可以确定的是，由于玻璃膜中的陷阱捕获了电子，磷硅酸盐玻璃膜的存在使得有可能显着减少缺陷区域中的局部注入电流，从而导致能垒的增加。结果，在高电场影响下在注入到电介质中的电荷的低值下分解的结构的数量显着减少。结果表明，在磷硅酸盐玻璃膜中，注入的电子的热量减少，这也导致在高场注入效应下栅极电介质的电荷稳定性增加。