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Increasing the Charge Stability of Gate Dielectric Films of MIS Structures by Doping Them with Phosphorus

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Inorganic Materials: Applied Research Aims and scope

Abstract

It is shown that thermal doping of SiO2 film with phosphorus, which leads to the formation of a thin film of phosphosilicate glass on its surface, makes it possible to increase the charge stability of the gate dielectric of MIS structures. It is established that the presence of a film of phosphosilicate glass makes it possible to significantly reduce local injection currents flowing in defective areas owing to the capture of electrons by traps in a film of glass, leading to an increase in the energy barrier. As a result, the number of structures that break down at low values of the charge injected into the dielectric under high-field influences significantly decreases. It is shown that, in a film of phosphosilicate glass, the heating of injected electrons decreases, which also leads to an increase in the charge stability of the gate dielectric under high-field injection effects.

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Funding

This study was financially supported by the Ministry of Science and Higher Education of the Russian Federation as a part of the project “Fundamental Research on Methods for Digital Transformation of the Component Base of Micro- and Nanosystems” no. 0705-2020-0041.

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Authors and Affiliations

  1. Bauman Moscow State Technical University, Kaluga Branch, 248000, Kaluga, Russia

    D. V. Andreev, V. V. Andreev & A. A. Stolyarov

  2. National Research University Higher School of Economics, 123458, Moscow, Russia

    G. G. Bondarenko

Authors
  1. D. V. Andreev
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  2. G. G. Bondarenko
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  3. V. V. Andreev
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  4. A. A. Stolyarov
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Correspondence to D. V. Andreev, G. G. Bondarenko, V. V. Andreev or A. A. Stolyarov.

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Translated by S. Rostovtseva

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Andreev, D.V., Bondarenko, G.G., Andreev, V.V. et al. Increasing the Charge Stability of Gate Dielectric Films of MIS Structures by Doping Them with Phosphorus. Inorg. Mater. Appl. Res. 12, 517–520 (2021). https://doi.org/10.1134/S2075113321020039

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  • DOI: https://doi.org/10.1134/S2075113321020039

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