A method is proposed in this paper to prepare a SiC slurry with SiC particles selected by an ultrasonic-assisted elutriation method to reduce substrate surface damage caused by abrasive particles during lapping. Sapphire substrate lapping experiments were carried out using the prepared SiC slurry, and the lapping performance of the slurry was analyzed. The experimental results show that the SiC particle size is a factor that directly affects the material removal rate and surface roughness Ra, of sapphire substrates. When a SiC slurry with a particle size of 630 nm was used, the material removal rate was 508 nm/h, and the surface roughness Ra was 1.9 nm; increasing the slurry concentration and the platen rotating speed can improve the material removal rate. In addition, the agglomeration of SiC particles in the slurry depends on the pH of the slurry. Efficient precision lapping of sapphire substrates can be achieved by selecting appropriately sized SiC particles and by adjusting the slurry pH to control the agglomeration and dispersion of SiC particlesto further reduce the scratches on the substrate surface during the lapping process.

本文提出了一种方法，用超声波辅助淘析方法选择含有SiC颗粒的SiC浆料，以减少研磨过程中由磨料颗粒引起的基板表面损伤。使用制得的SiC浆料进行了蓝宝石衬底的研磨实验，并分析了该浆料的研磨性能。实验结果表明，SiC粒径是直接影响蓝宝石衬底材料去除率和表面粗糙度Ra的因素。当使用粒径为630nm的SiC浆料时，材料去除速率为508nm / h，并且表面粗糙度Ra为1.9nm。提高浆料浓度和压板转速可以提高材料去除率。此外，浆料中SiC颗粒的团聚取决于浆料的pH值。通过选择合适尺寸的SiC颗粒并通过调节浆料的pH值以控制SiC颗粒的团聚和分散，以进一步减少研磨过程中在衬底表面上的划痕，可以实现对蓝宝石衬底的高效精密研磨。