Abstract

Dark current is the main factor that influences photodiode performance. It should be minimal to reduce noise and ensure a high level of photoelectric parameters. In order to identify the predominant causes of generation–recombination in photodiodes based on a mercury–cadmium–tellurium (MCT) ternary compound in the given voltage range, a calculation model is proposed for dark currents caused by fundamental and other current mechanisms. The components of dark current in photodiodes based on MCT heterostructures grown by molecular beam epitaxy (MBE) and liquid-phase epitaxy (LPE) methods are determined in the reverse bias voltages range from 0 to 40 mV. In the range from 0 to 20 mV, these characteristics are reduced to the diffusion component. When the reverse bias voltage exceeds 30 mV, an increase in the Shockley–Read–Hall (SRH) generation–recombination current and tunneling current through trap levels in the band gap is observed.

中文翻译：

---

HgCdTe异质结构光电二极管中暗电流的研究

摘要

暗电流是影响光电二极管性能的主要因素。应当最小化以减少噪声并确保高水平的光电参数。为了确定在给定电压范围内基于汞-镉-碲（MCT）三元化合物的光电二极管中产生-重组的主要原因，提出了一种由基本电流机制和其他电流机制引起的暗电流的计算模型。基于分子束外延（MBE）和液相外延（LPE）方法生长的MCT异质结构的光电二极管中的暗电流分量是在0至40 mV的反向偏置电压范围内确定的。在0至20 mV的范围内，这些特性降低为扩散成分。当反向偏置电压超过30 mV时，