Abstract
Dark current is the main factor that influences photodiode performance. It should be minimal to reduce noise and ensure a high level of photoelectric parameters. In order to identify the predominant causes of generation–recombination in photodiodes based on a mercury–cadmium–tellurium (MCT) ternary compound in the given voltage range, a calculation model is proposed for dark currents caused by fundamental and other current mechanisms. The components of dark current in photodiodes based on MCT heterostructures grown by molecular beam epitaxy (MBE) and liquid-phase epitaxy (LPE) methods are determined in the reverse bias voltages range from 0 to 40 mV. In the range from 0 to 20 mV, these characteristics are reduced to the diffusion component. When the reverse bias voltage exceeds 30 mV, an increase in the Shockley–Read–Hall (SRH) generation–recombination current and tunneling current through trap levels in the band gap is observed.
Similar content being viewed by others
REFERENCES
N. I. Yakovleva, Usp. Prikl. Fiz. 3 (2), 169 (2015).
N. I. Yakovleva, Prikl. Fiz., No. 5, 59 (2015).
W. Shockley and W. T. Read, Phys. Rev. 8, 835 (1952).
A. Unikovski and Y. Nemirovsky, Appl. Phys. Lett. 61, 330 (1992).
K. O. Boltar’ and N. I. Yakovleva, Prikl. Fiz., No. 3, 82 (2004).
N. I. Yakovleva, Usp. Prikl. Fiz. 6 (3), 231 (2018).
W. Van Roosbroeck and W. Shockley, Phys. Rev. 94, 1558 (1954).
J. S. Blakemore, Semiconductor Statistics, International Series of Monographs on Semiconductors (Pergamon, New York, 1962), Vol. 3.
D. K. Blanks, J. D. Beck, M. A. Kinch, and L. Colombo, J. Vac. Sci. Technol. A 6, 2790 (1988).
M. A. Kinch, “HgCdTe: Material of Choice for Tactical Systems. Tunneling Via Bandgap States” in Fundamentals of Infrared Detector Materials, (SPIE, Bellingham, Washington, 98227-0010, 2007).
Y. Nemirovsky, D. Rosenfeld, R. Adar, and A. Kornfeld, J. Vac. Sci. Technol. A7, 528 (1989).
M. B. Reine, A. K. Sood, and T. J. Tredwell, Semicond. Semimetals 18, Ch. 6 (1981).
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated by N. Semenova
Rights and permissions
About this article
Cite this article
Iakovleva, N.I. The Study of Dark Currents in HgCdTe Heterostructure Photodiodes. J. Commun. Technol. Electron. 66, 368–374 (2021). https://doi.org/10.1134/S1064226921030220
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1064226921030220