This paper deals with the design and optimization of a triple-junction (TJ) solar cell using indium gallium nitride (InGaN) material. Two tunnel diodes are used to ensure connection between the different subcells. A comprehensive study is performed by means of 2D numerical simulations to locate the best bandgap combination that leads to an optimized current matching. During the simulations, the doping concentration and the base thickness are considered as fitting parameters for the top and the middle subcells. The In_0.39Ga_0.61N/In_0.57Ga_0.43N/In_0.74Ga_0.26N bandgap combination is supposed to be 2.02 eV/1.52 eV/1.13 eV. A high short-circuit current density (13.313 mA/cm²) is achieved by assuming a base thickness of 1 µm for each subcell and a p/n doping ratio of 5 × 10¹⁸ cm⁻³/5 × 10¹⁵ cm⁻³ in the top cell, 1.5 × 10¹⁹ cm⁻³/1.5 × 10¹⁶ cm⁻³ in the middle cell, and 7.5 × 10¹⁸ cm⁻³/7.5 × 10¹⁵ cm⁻³ in the bottom cell. The optimized structure has an improved open-circuit voltage (2.877 V), fill factor (83%), and conversion efficiency (33.11%).

本文研究了使用氮化铟镓（InGaN）材料的三结（TJ）太阳能电池的设计和优化。两个隧道二极管用于确保不同子电池之间的连接。借助于2D数值模拟进行了全面的研究，以找到能够优化电流匹配的最佳带隙组合。在仿真过程中，掺杂浓度和基极厚度被视为顶部和中间子电池的拟合参数。In _0.39 Ga _0.61 N / In _0.57 Ga _0.43 N / In _0.74 Ga _0.26 N带隙组合应为2.02 eV / 1.52 eV / 1.13 eV。短路电流密度高（13.313 mA / cm ²）通过假设1μm的基底厚度为每个子小区和AP / N的5×10掺杂率达到¹⁸ 厘米^-3 / 5×10 ¹⁵ 厘米^-3的顶部电池，1.5×10 ¹⁹ 厘米^-3 /1.5在中间单元格中为×10 ¹⁶  cm ^-3，在底部单元格中为7.5×10 ¹⁸  cm ^-3 /7.5×10 ¹⁵  cm ^-3。优化的结构具有改善的开路电压（2.877 V），填充系数（83％）和转换效率（33.11％）。