A simple and robust design for CMOS realization of a tunable grounded meminductor using three operational transconductance amplifier (OTA) and two capacitors have been proposed. Both theoretical analyses and simulation using Cadence Virtuoso at 0.18 \(\upmu {m}\) CMOS technology parameters verify the validity of the meminductor. Its meminductance can be tuned with the help of external bias voltage and has an operating frequency of 10 MHz, which makes it suitable for high-frequency applications. The proposed meminductor can also be configured using both incremental and decremental mode by interchanging the pin of OTA. Various parameters variability analysis like process variation, capacitor variation, voltage variation, temperature variation, and frequency variation has been carried out and our proposed meminductor has shown excellent performance.

已经提出了使用三个运算跨导放大器（OTA）和两个电容器的CMOS实现可调接地的磁敏电阻的简单而稳健的设计。使用Cadence Virtuoso在0.18 \（\ upmu {m} \）进行理论分析和仿真 CMOS技术参数验证了电感器的有效性。可以通过外部偏置电压来调节其电感，其工作频率为10 MHz，使其适合于高频应用。通过互换OTA的引脚，还可以使用增量模式和减量模式配置所建议的电感器。已经进行了各种参数的可变性分析，例如工艺变化，电容器变化，电压变化，温度变化和频率变化，并且我们提出的磁导器表现出优异的性能。