当前位置: X-MOL 学术Semiconductors › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Shape Effect on the Electrical Properties of Indium-Antimonide Quantum Dots
Semiconductors ( IF 0.6 ) Pub Date : 2021-04-05 , DOI: 10.1134/s1063782621030106
V. F. Kabanov , A. I. Mikhailov , M. V. Gavrikov

Abstract

The impact of the shape of indium-antimonide quantum dots on some important electrical parameters is investigated by the analysis of their optical spectra, transmission electron microscopy, scanning tunneling microscopy, particle size measurements, and scanning electron microscopy. It is shown that the real shape (spherical and cubic models) of quantum dots with the same characteristic size has a noticeable effect on the energy spectrum of the investigated objects and, accordingly, their electrical and optical properties.



中文翻译:

形状对锑化铟量子点电性能的影响

摘要

通过分析铟-锑化物量子点的光谱,透射电子显微镜,扫描隧道显微镜,粒度测量和扫描电子显微镜,研究了锑酸铟量子点形状对一些重要电参数的影响。结果表明,具有相同特征尺寸的量子点的真实形状(球形和立方模型)对被研究对象的能谱以及相应的电学和光学特性都有显着影响。

更新日期:2021-04-05
down
wechat
bug