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Shape Effect on the Electrical Properties of Indium-Antimonide Quantum Dots

  • SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
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Abstract

The impact of the shape of indium-antimonide quantum dots on some important electrical parameters is investigated by the analysis of their optical spectra, transmission electron microscopy, scanning tunneling microscopy, particle size measurements, and scanning electron microscopy. It is shown that the real shape (spherical and cubic models) of quantum dots with the same characteristic size has a noticeable effect on the energy spectrum of the investigated objects and, accordingly, their electrical and optical properties.

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REFERENCES

  1. I. V. Ignat’ev and I. E. Kozin, Carrier Dynamics in Semiconductor Quantum Dots (Solo, St. Petersburg, 2005) [in Russian].

    Google Scholar 

  2. P. Reiss and M. Carriere, Chem. Rev. 116, 10731 (2016).

    Article  Google Scholar 

  3. A. D. Yoffe, Adv. Phys. 50, 1 (2010).

    Article  ADS  Google Scholar 

  4. S. B. Brichkin and V. F. Razumov, Russ. Chem. Rev. 85, 1297 (2016).

    Article  ADS  Google Scholar 

  5. R. B. Vasil’ev and D. N. Dirin, Quantum Dots: Synthesis, Properties, Applications (FNM, Moscow, 2007) [in Russian].

    Google Scholar 

  6. W. Liu, A. Y. Chang, R. D. Schaller, and D. V. Talapin, J. Am. Chem. Soc. 134, 20258 (2012).

    Article  Google Scholar 

  7. A. I. Mikhailov, V. F. Kabanov, E. G. Glukhovskoy, M. I. Shishkin, and M. V. Gavrikov, Nanosyst.: Phys. Chem. Math. 9, 464 (2018).

    Google Scholar 

  8. V. P. Dragunov, I. G. Neizvestnyi, and V. A. Gridchin, Fundamentals of Nanoelectronics (Logos, Moscow, 2006) [in Russian].

    Google Scholar 

  9. N. E. Kaputkina and Y. E. Lozovik, Phys. Solid State 40, 1935 (1998).

    Article  ADS  Google Scholar 

  10. A. I. Mikhailov, V. F. Kabanov, N. D. Zhukov, and E. G. Glukhovskoy, Nanosyst.: Phys. Chem. Math. 8, 596 (2017).

    Google Scholar 

  11. T. Wang, ACS Nano 9, 725 (2015).

    Article  Google Scholar 

  12. A. I. Mikhailov, V. F. Kabanov, I. A. Gorbachev, and E. G. Glukhovsky, Semiconductors 52, 750 (2018).

    Article  ADS  Google Scholar 

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Funding

This study was supported by the Russian Foundation for Basic Research, project nos. 19-07-00087 and 19-07-00086.

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Correspondence to M. V. Gavrikov.

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The authors declare no conflict of interest.

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Translated by M. Skorikov

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Kabanov, V.F., Mikhailov, A.I. & Gavrikov, M.V. Shape Effect on the Electrical Properties of Indium-Antimonide Quantum Dots. Semiconductors 55, 315–318 (2021). https://doi.org/10.1134/S1063782621030106

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  • DOI: https://doi.org/10.1134/S1063782621030106

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