Carrier mobility is one of the most fundamental material parameters of semiconductors and requisite for device applications and interpretation of physical phenomena. We determined the electron and hole mobilities of a CH₃NH₃PbBr₃ single crystal in the high-carrier density regime by combining AC Hall measurements under photoexcitation and two-carrier analysis. Both electron and hole mobilities were significantly enhanced by photo-doping and exceeded 300 cm² V⁻¹ s⁻¹, which are comparable to the electron Hall mobilities of conventional inorganic semiconductors. Our experimental results indicate that charged dislocation scattering dominates the carrier transport at room temperature in the low-carrier density regime.

载流子迁移率是半导体最基本的材料参数之一，也是器件应用和物理现象解释的必要条件。我们通过结合光激发下的交流霍尔测量和双载流子分析，确定了 CH ₃ NH ₃ PbBr ₃单晶在高载流子密度范围内的电子和空穴迁移率。电子和空穴迁移率均通过光掺杂显着增强并超过 300 cm ² V ^-1 s ^-1，这与传统无机半导体的电子霍尔迁移率相当。我们的实验结果表明，在低载流子密度范围内，带电位错散射在室温下主导载流子传输。