Serious reliability concerns of Static Random Access Memories (SRAMs) in nanometer technologies are the increased process variations as well as the various aging mechanisms. Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI) phenomena are the main factors related to the aging reliability reduction. This degradation affects speed, operating voltages, memory cell noise margins and sense amplifier input offset voltage. Thus, it is imperative to develop design techniques for aging tolerance that will provide the ability to sense aging levels, predict upcoming failures in the memory and early react to retain the reliable operation. In this work, a circuit for the periodic aging monitoring in SRAM sense amplifiers and memory cells is presented.

纳米技术中静态随机存取存储器（SRAM）的严重可靠性问题是工艺变化的增加以及各种老化机制。偏置温度不稳定性（BTI）和热载流子注入（HCI）现象是与老化可靠性降低有关的主要因素。这种降级会影响速度，工作电压，存储单元噪声容限和读出放大器输入失调电压。因此，迫切需要开发一种耐老化的设计技术，该技术将提供感知老化水平，预测内存中即将出现的故障并及早做出反应以保持可靠操作的能力。在这项工作中，提出了一种用于在SRAM读出放大器和存储单元中进行定期老化监视的电路。