Abstract

The paper states the operating principles of subminiature semiconductor emitters and offers the research results of the performance for those emitters that were developed and manufactured at the Rzhanov Institute of Semiconductor physics of SB RAS over the last three years. Single photon emitter based on Al\({}_{x}\)In\({}_{1-x}\)As/Al\({}_{y}\)Ga\({}_{1-y}\)As quantum dots has been developed. Hanbury Brown and Twiss experiment has been carried out to measure the photon statistics. The photon correlation function demonstrates a clear photon antibunching effect (\(g^{2}\)(0) \(\approx\)0.04), which is a direct evidence of single photon emission by single Al\({}_{x}\)In\({}_{1-x}\)As quantum dots. The results of developing single-mode vertical-cavity surface-emitting lasers with a wavelength of 794.8 nm future-oriented for application in chip-scale atomic clock and operating at the transition 5S\({}_{1/2}\to\)5P\({}_{1/2}\) of Rb\({}^{87}\) are reported.

中文翻译：

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基于半导体纳米结构的超小型光源

摘要

本文阐述了超小型半导体发射器的工作原理，并提供了在过去三年中由SB RAS的拉任诺夫半导体物理研究所开发和制造的那些发射器的性能研究结果。基于Al \（{} _ {x} \） In \（{} _ {1-x} \） As / Al \（{} _ {y} \） Ga \（{} _ {1 -y} \）随着量子点的发展。已经进行了Hanbury Brown和Twiss实验来测量光子统计量。光子相关函数显示出清晰的光子反聚束效应（\（g ^ {2} \）（0）\（\ approx \） 0.04），这是单个Al \（{} _ { X}\）在\（{} _ {1-x} \）中作为量子点。开发面向未来的单模垂直腔面发射激光器的结果，该激光器的未来波长为794.8 nm，可应用于芯片级原子钟并以5S \（{} _ {1/2} \ to \ ）报告了Rb \ {{} ^ {87} \ ）的5P \ {{__ 1/2} \）。