Abstract

Intense luminescence and nanosecond relaxation of photocurrent upon strong optical excitation have been observed in CuIn₅S₈ crystals grown by slow melt cooling at a constant temperature gradient. Three emission bands with energies of 1.52, 1.48, and 1.465 eV are distinguished in the photoluminescence spectra. The crystal photoactivation in the range of 300–600 K is explained by an increase in the hole mobility in the valence band with an increase in temperature.

中文翻译：

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强光激发下CuIn 5 S 8晶体的光致发光特性和纳秒弛豫的光电流

摘要

在通过恒定温度梯度下的缓慢熔融冷却生长的CuIn ₅ S ₈晶体中，观察到强光激发后的强烈发光和纳秒弛豫。在光致发光光谱中区分出三个能量为1.52、1.48和1.465 eV的发射带。晶体光活化在300–600 K范围内可以解释为，价带中空穴的迁移率随温度的升高而增加。