This paper presents a wide frequency range three-stage voltage-controlled ring oscillator in CNTFET technology. The advantages of CNTFETs are the high speed of charge carriers, high signal to noise ratio, small size and ballistic transport. Therefore in comparison with MOSFETs, they have a higher frequency, and can operate at a wide frequency range with a very low phase noise if forward bulk bias and active inductor techniques are simultaneously used in the oscillators that employ CNTFETs. In this paper, the Stanford CNTFET model is implemented in Verilog-A, and the proposed CNT ring oscillator is simulated using ADS software over the 50–500 GHz frequency range. The phase noise of the oscillator is − 136 dBc/Hz at 1 MHz offset, which is suitable for PLL applications.

本文介绍了采用CNTFET技术的宽频率范围的三级压控环形振荡器。CNTFET的优点是电荷载流子的高速，高信噪比，小尺寸和弹道传输。因此，与MOSFET相比，如果在采用CNTFET的振荡器中同时使用正向体偏置和有源电感器技术，它们具有更高的频率，并且可以在很低的相位噪声的宽频率范围内工作。在本文中，在Verilog-A中实现了Stanford CNTFET模型，并使用ADS软件在50–500 GHz频率范围内对提出的CNT环形振荡器进行了仿真。振荡器的相位噪声在1 MHz偏移下为− 136 dBc / Hz，适用于PLL应用。