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Bi 2 O 2 Se/BP van der Waals heterojunction for high performance broadband photodetector
Science China Information Sciences ( IF 7.3 ) Pub Date : 2021-03-02 , DOI: 10.1007/s11432-020-3101-1
Xing Liu , Wenhui Wang , Fang Yang , Shaopeng Feng , Zhenliang Hu , Junpeng Lu , Zhenhua Ni

Broadband photodetector has wide applications in the field of remote sensing, health monitoring and medical imaging. Two-dimensional (2D) materials with narrow bandgaps have shown enormous potential in broadband photodetection. However, the device performance is often restricted by the high dark currents. Herein, we demonstrate a high performance broadband photodetector by constructing Bi2O2Se/BP van der Waals heterojunction. The device exhibits a p-n diode behavior with a current rectification ratio of ∼20. Benifited from the low dark current of the heterojunction and the effective carrier separation, the device achieves the responsivity (R) of ∼ 500 A/W, ∼ 4.3 A/W and ∼ 2.3 A/W at 700 nm, 1310 nm and 1550 nm, respectively. The specific detectivity (D*) is up to ∼ 2.8 × 1011 Jones (700 nm), ∼ 2.4 × 109 Jones (1310 nm) and ∼ 1.3 × 109 Jones (1550 nm). Moreover, the response time is ∼ 9 ms, which is more than 20 times faster than that of individual BP (∼ 190 ms) and Bi2O2Se (∼ 180 ms) devices.



中文翻译:

Bi 2 O 2 Se / BP Van der Waals异质结,用于高性能宽带光电探测器

宽带光电探测器在遥感,健康监测和医学成像领域具有广泛的应用。具有窄带隙的二维(2D)材料在宽带光电检测中显示了巨大的潜力。但是,器件性能通常受到高暗电流的限制。本文中,我们通过构建Bi 2 O 2 Se / BP van der Waals异质结展示了一种高性能的宽带光电探测器。该器件在电流整流比约为20的情况下具有pn二极管特性。得益于异质结的低暗电流和有效的载流子分离,该器件在700 nm,1310 nm和1550 nm处的响应度(R)为〜500 A / W,〜4.3 A / W和〜2.3 A / W。 , 分别。特定的侦探性(D *)高达2.8×10 11 Jones(700 nm),2.4×10 9 Jones(1310 nm)和1.3×10 9 Jones(1550 nm)。此外,响应时间约为9毫秒,比单个BP(约为190毫秒)和Bi 2 O 2 Se(约为180毫秒)设备的响应时间快20倍以上。

更新日期:2021-03-05
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