Abstract

The results of testing the degradation of light-emitting diode structures with InGaN/GaN quantum wells are reported. An increase in the external quantum efficiency as compared to the initial value is observed after the passage of current of 150–170 mA. Possible physical processes leading to a change in the quantum efficiency and an increase in low-frequency noise are considered.

中文翻译：

---

伴随着外部量子效率提高的电作用下，基于InGaN / GaN量子阱的发光二极管中的低频噪声

摘要

报道了用InGaN / GaN量子阱测试发光二极管结构的退化的结果。在通过150–170 mA电流后，观察到外部量子效率与初始值相比有所增加。考虑了可能导致量子效率改变和低频噪声增加的物理过程。