Abstract
The results of testing the degradation of light-emitting diode structures with InGaN/GaN quantum wells are reported. An increase in the external quantum efficiency as compared to the initial value is observed after the passage of current of 150–170 mA. Possible physical processes leading to a change in the quantum efficiency and an increase in low-frequency noise are considered.
Similar content being viewed by others
REFERENCES
M. La Grassa, M. Meneghini, C. De Santi, M. Mandurrino, M. Goano, F. Bertazzi, R. Zeisel, B. Galler, G. Meneghesso, and E. Zanoni, Microelectron. Reliab. 55, 1775 (2015).
D. Monti, M. Meneghini, C. De Santi, G. Meneghesso, and E. Zanoni, IEEE Trans. Device Mater. Reliab. 16 (2), 213 (2016).
C. G. Moe, M. L. Reed, G. A. Garrett, A. V. Sampath, T. Alexander, H. Shen, M. Wraback, Y. Bilenko, M. Shatalov, J. Yang, W. Sun, J. Deng, and R. Gaska, Appl. Phys. Lett. 96, 213512 (2010).
C. De Santi, M. Meneghini, G. Meneghesso, and E. Zanoni, Microelectron. Reliab. 64, 623 (2016).
N. Trivellin, D. Montia, C. De Santi, M. Buffoloa, G. Meneghessoa, E. Zanonia, and M. Meneghinia, Microelectron. Reliab. 88–90, 868 (2018).
M. La Grassa, M. Meneghini, C. De Santi, E. Zanoni, and G. Meneghesso, Microelectron. Reliab. 64, 614 (2016).
Z. Yatabe, J. T. Asubar, and T. Hashizume, J. Phys. D: Appl. Phys. 49, 393001 (2016).
B.I. Yakubovich, Nadezhnost’ 17 (2), 31 (2017). https://doi.org/10.21683/1729-2646-2017-17-2-31-35
N. I. Bochkareva, A. M. Ivanov, A. V. Klochkov, V. S. Kogotkov, Yu. T. Rebane, M. V. Virko, and Y. G. Shreter, Semiconductors 49 (6), 827 (2015). https://doi.org/10.1134/S1063782615060056
N. I. Bochkareva, A. M. Ivanov, A. V. Klochkov, and Y. G. Shreter, Semiconductors 53 (1), 99 (2019). https://doi.org/10.1134/S1063782619010032
N. I. Bochkareva, A. M. Ivanov, A. V. Klochkov, V. A. Tarala, and Yu. G. Shreter, Tech. Phys. Lett. 42 (11), 1099 (2016). https://doi.org/10.1134/S1063785016110146
N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, A. S. Zubrilov, Y. S. Lelikov, P. E. Latyshev, Y. T. Rebane, A. I. Tsyuk, and Y. G. Shreter, Appl. Phys. Lett. 96 (13), 133502 (2010). https://doi.org/10.1063/1.3367897
S. Nakamura, M. Senon, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, Jpn. J. Appl. Phys. 34 (10B), L1332 (1995). https://doi.org/10.1143/JJAP.34.L1332
N. I. Bochkareva, Yu. T. Rebane, and Yu. G. Shreter, Semiconductors 49 (12), 1665 (2015). https://doi.org/10.1134/S1063782615120040
A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Lavrinovich, Yu. T. Rebane, D. V. Tarkhin, and Yu. G. Shreter, Semiconductors 40 (5), 605 (2006). https://doi.org/10.1134/S1063782606050162
N. I. Bochkareva, R. I. Gorbunov, A. V. Klochkov, Yu. S. Lelikov, I. A. Martynov, Yu. T. Rebane, A. S. Belov, and Yu. G. Shreter, Semiconductors 42 (11), 1355 (2008). https://doi.org/10.1134/S1063782608110225
E. F. Schubert, Light Emitting Diodes (Cambridge Univ. Press, Cambridge, 2003).
A. David, C. A. Hurni, N. G. Young, and M. D. Craven, Appl. Phys. Lett. 109, 083501 (2016).
D. Zhu, J. Xu, A. Noemaun, J. Kim, E. Schubert, M. Crawford, and D. Koleske, Appl. Phys. Lett. 94, 081113 (2009).
G. Meneghesso, M. Meneghini, and E. Zanoni, J. Phys. D: Appl. Phys. 43, 354007 (2010).
J. Hu, L. Yang, and M. W. Shin, J. Phys. D: Appl. Phys. 41, 035107 (2008).
M. Meneghini, G. Meneghesso, N. Trivellin, E. Zanoni, K. Orita, M. Yuri, and D. Ueda, IEEE Electron Device Lett. 29 (6), 578 (2008).
M. Meneghini, N. Trivellin, K. Orita, S. Takigawa, M. Yuri, T. Tanaka, D. Ueda, E. Zanoni, and G. Meneghesso, IEEE Electron Device Lett. 30 (4), 356 (2009).
D. Monti, M. Meneghini, C. De Santi, G. Meneghesso, E. Zanoni, J. Glaab, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, and M. Kneissl, IEEE Trans. Electron Devices 64 (1), 200 (2017).
J. Glaab, J. Haefke, J. Ruschel, M. Brendel, J. Rass, T. Kolbe, A. Knauer, M. Weyers, S. Einfeldt, M. Guttmann, C. Kuhn, J. Enslin, T. Wernicke, and M. Kneissl, J. Appl. Phys. 123, 104502 (2018).
J. Glaab, J. Ruschel, T. Kolbe, A. Knauer, J. Rass, H.K. Cho, N. Lobo Ploch, S. Kreutzmann, S. Einfeldt, M. Weyers, and M. Kneissl, IEEE Photonics Technol. Lett. 31 (7), 529 (2019).
E. Fabris, M. Meneghini, C. De Santi, Z. Hu, W. Li, K. Nomoto, X. Gao, D. Jena, H. G. Xing, G. Meneghesso, and E. Zanoni, Microelectron. Reliab. 88–90, 568 (2018).
C. De Santi, M. Meneghini, N. Trivellin, S. Gerardin, M. Bagatin, A. Paccagnella, G. Meneghesso, and E. Zanoni, Appl. Phys. Lett. 105, 213506 (2014).
T. T. Chen, C. P. Wang, H. K. Fu, P. T. Chou, and S. P. Ying, Opt. Express 22 (S5), A1328 (2014).
K. C. Yung, H. Liem, H. S. Choy, and W. K. Lun, J. Appl. Phys. 109, 094509 (2011).
J. Fu, L. Zhao, H. Cao, X. Sun, B. Sun, J. Wang, and J. Li, AIP Adv. 6, 055219 (2016).
S. Bychikhin, D. Pogany, L. K. J. Vandamme, G. Meneghesso, and E. Zanoni, J. Appl. Phys. 97, 123714 (2005).
N. V. D’yakonova, M. E. Levinshtein, and S. L. Rumyantsev, Sov. Phys.-Semicond. 25 (12), 1241 (1991).
S. Sawyer, S. L. Rumyantsev, M. S. Shur, N. Pala, Yu. Bilenko, J. P. Zhang, X. Hu, A. Lunev, J. Deng, and R. Gaska, J. Appl. Phys. 100, 034504 (2006).
F. N. Hooge, Physica 60 (1), 130 (1972). https://doi.org/10.1016/0031-8914(72)90226-1
G.P. Zhigal’skii, Phys.-Usp. 46 (5), 449 (2003). https://doi.org/10.1070/PU2003v046n05ABEH001244
B. Šaulys, J. Matukas, V. Palenskis, S. Pralgauskaitė, and G. Kulikauskas, Acta Phys. Pol., A 119 (4), 514 (2011). https://doi.org/10.12693/APhysPolA.119.521
L. Wang, W. He, T. Zheng, Z. Chen, and S. Zheng, Superlattices Microstruct. 133, 106188 (2019).
N. Liu, H. Gu, Y. Wei, and S. Zheng, Superlattices Microstruct. 141, 106492 (2020).
X. Wang, H.-Q. Sun, and Z.-Y. Guo, Opt. Mater. 86, 133 (2018).
ACLNOWLEDGMENTS
The author thanks A.V. Klochkov for participation in the research and valuable remarks.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The author declares that he has no conflicts of interest.
Additional information
Translated by N. Wadhwa
Rights and permissions
About this article
Cite this article
Ivanov, A.M. Low-Frequency Noise in Light-Emitting Diodes Based on InGaN/GaN Quantum Wells under Electric Actions Accompanied with an Increase in the External Quantum Efficiency. Tech. Phys. 66, 71–76 (2021). https://doi.org/10.1134/S1063784221010114
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063784221010114