Abstract

Hydrogenized carbon films 0.5–7.0 μm thick doped with silicon (11.9 ± 0.4 at %) and oxygen (1.7 ± 0.1 at %) have been grown on VT-6 titanium and silicon substrates in an externally heated arc discharge plasma. The hardness, internal stresses, surface morphology, wettability, and surface potential of the films against their thickness have been studied. It has been found that as the film gets thicker, the allowable load on the material and its hardness grow. It has been shown that the films have low internal stresses (below 600 MPa) and the water contact angle is 75°–80°. It have turned out that an increase in film thickness raises the negative surface potential from 50 to 670 mV.

中文翻译：

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掺硅和氧的氢化碳膜的厚度对其表面性能的影响

摘要

在外部加热的电弧放电等离子体中，在VT-6钛和硅基板上生长了厚度为0.5-7.0μm的氢化碳膜，掺杂了硅（11.9±0.4 at％）和氧（1.7±0.1 at％）。研究了膜的硬度，内应力，表面形貌，润湿性和表面电位对厚度的影响。已经发现，随着膜变厚，材料上的容许载荷及其硬度会增加。结果表明，薄膜的内应力低（低于600 MPa），水接触角为75°–80°。结果表明，膜厚度的增加使负表面电势从50mV增加到670mV。