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The Influence of the Thickness of Silicon- and Oxygen-Doped Hydrogenized Carbon Films on Their Surface Properties

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Abstract

Hydrogenized carbon films 0.5–7.0 μm thick doped with silicon (11.9 ± 0.4 at %) and oxygen (1.7 ± 0.1 at %) have been grown on VT-6 titanium and silicon substrates in an externally heated arc discharge plasma. The hardness, internal stresses, surface morphology, wettability, and surface potential of the films against their thickness have been studied. It has been found that as the film gets thicker, the allowable load on the material and its hardness grow. It has been shown that the films have low internal stresses (below 600 MPa) and the water contact angle is 75°–80°. It have turned out that an increase in film thickness raises the negative surface potential from 50 to 670 mV.

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ACKNOWLEDGMENTS

The authors thank the administration of the Tomsk Regional Research Center for Collective Use center (Siberian Branch, Russian Academy of Sciences) for the submission of the NanoTest 600 nanoindenter.

Funding

This study was supported by grant no. MK-1234.2020.8 of the President of the Russian Federation. Surface potential measurements were supported by the Russian Science Foundation, grant no. 19-19-00186.

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Authors and Affiliations

  1. Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences, 634055, Tomsk, Russia

    A. S. Grenadyorov, A. A. Solov’ev & K. V. Oskomov

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  1. A. S. Grenadyorov
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  2. A. A. Solov’ev
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  3. K. V. Oskomov
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Correspondence to A. S. Grenadyorov.

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Translated by V. Isaakyan

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Grenadyorov, A.S., Solov’ev, A.A. & Oskomov, K.V. The Influence of the Thickness of Silicon- and Oxygen-Doped Hydrogenized Carbon Films on Their Surface Properties. Tech. Phys. 66, 139–144 (2021). https://doi.org/10.1134/S1063784221010096

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  • DOI: https://doi.org/10.1134/S1063784221010096

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