Abstract

The dielectric properties of polycrystalline fullerite films with a thickness of ~300 nm included in p-Si/C₆₀/InGa structures under dc electric fields with a strength up to 3.3 × 10⁷ V/m have been investigated in the frequency range of 30–10⁶ Hz. It is established that, at negative polarity of an InGa electrode (when electron injection from the metal to fullerite is facilitated), an anomalous increase in the sample capacitance is observed at frequencies below 1000 Hz (the capacitance at a low frequency is higher than that at a high frequency by a factor of more than 10³). An explanation for this effect is proposed.

中文翻译：

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限流电流对富勒石C 60多晶膜介电性能的影响

摘要

研究了在频率范围为30的直流电场下，p -Si / C ₆₀ / InGa结构中包含的〜300 nm厚度的多晶富勒岩薄膜的介电性能，强度为3.3×10 ⁷ V / m。 –10 ⁶赫兹。可以确定的是，在InGa电极的负极性（当促进从金属到富勒石的电子注入）时，在低于1000 Hz的频率下观察到样品电容的反常增加（低频下的电容高于该频率下的电容）。在由超过10倍高的频率³）。建议对此效果进行解释。