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A Common-Gate Current-Reuse UWB LNA for Wireless Applications in 90 nm CMOS
Wireless Personal Communications ( IF 1.9 ) Pub Date : 2021-02-24 , DOI: 10.1007/s11277-021-08287-5
Vikram Singh , Sandeep Kumar Arya , Manoj Kumar

In this paper, a CMOS low noise amplifier (LNA) for ultra-wideband (UWB) wireless applications is presented. The proposed CMOS LNA is designed using common-gate (CG) topology at the first stage to achieve ultra wideband input matching. The common-gate has been cascaded with common-source (CS) current-reused configuration to enhance the gain and noise figure (NF) performance of the LNA with low power consumption. In order to ensure maximum power flow from CG input stage to gm boosted CS current-reused stage, parallel-series LC matching has been used. The output-matching network is used to improve the output reflection coefficient. The LNA is designed using standard 90 nm CMOS process for 3.1–10.6 GHz UWB. It exhibits a power-gain (S21) of 19.2–20.8 dB, an NF of 2.3–3.7 dB, a reverse-isolation (S12) of less − 53.8 dB and an S22 of less than − 6 dB for the entire UWB frequency range. The proposed LNA has an input reflection coefficient (S11) of less than − 10.6 dB for 3.1–10.6 GHz. It achieves input 1-dB compression point (P1dB) of − 17 dBm at 6 GHz and input third-order intercept point (IIP3) of − 8 dBm, while it consumes only 5.05 mW of power from a Vdd supply of 0.7 V.



中文翻译:

用于90 nm CMOS的无线应用的通用门电流复用UWB LNA

本文介绍了一种用于超宽带(UWB)无线应用的CMOS低噪声放大器(LNA)。拟议的CMOS LNA在第一阶段使用共栅(CG)拓扑进行设计,以实现超宽带输入匹配。共栅已经与共源(CS)重用电流配置相串联,以增强LNA的增益和噪声系数(NF)性能,且功耗低。为了确保从CG输入级到最大功率流升压CS电流重用阶段,并联-串联LC匹配已被使用。输出匹配网络用于提高输出反射系数。LNA是针对3.1–10.6 GHz UWB使用标准的90 nm CMOS工艺设计的。它具有功率增益(S 21)在整个UWB频率范围内为19.2–20.8 dB,NF为2.3–3.7 dB,反向隔离(S 12)小于-53.8 dB,S 22小于-6 dB。所提出的LNA在3.1–10.6 GHz时的输入反射系数(S 11)小于− 10.6 dB。它在6 GHz时可实现− 17 dBm的输入1-dB压缩点(P1dB)和− 8 dBm的输入三阶拦截点(IIP3),而从0.7 V的Vdd电源仅消耗5.05 mW的功率。

更新日期:2021-02-24
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