We experimentally studied three types of group-IV-semiconductor quantum-dots (IV-QDs) of Si-, SiC-, and C-QDs in a thermal SiO₂ layer that were fabricated using a very simple hot-ion implantation technique for Si⁺, double Si⁺/C⁺, and C⁺ into the SiO₂ layer, respectively, to realize a different wavelength photoluminescence (PL) emission from near-IR to near-UV ranges. TEM analyses newly confirmed both Si- and C-QDs with a diameter of approximately 2–4nm in addition to SiC-QDs in SiO₂. We successfully demonstrated very strong PL emission from three IV-QDs, and the peak photon energies (E _PH) (peak PL-wavelength) of Si-, and SiC-, and C-QDs were approximately 1.56eV (800nm), 2.5eV (500nm), and 3.3eV (380nm), respectively. IV-QDs showed that the PL properties strongly depend on the hot-ion doses of Si and C atoms and the post N₂ annealing processes. Consequently, it is easy to design peak PL wavelengths by controlling the ion doses of Si⁺ and C⁺ implanted into the SiO₂ layer.

我们通过实验研究了热SiO ₂层中三种类型的Si-，SiC-和C-QD的IV-组半导体量子点（IV-QD），它们是通过非常简单的Si离子注入技术制成的⁺，将Si ⁺ / C ⁺和C ^+分别加到SiO ₂层中，以实现从近红外到近紫外范围的不同波长的光致发光（PL）发射。TEM分析表明，除了SiO _2中的SiC-QD之外，Si-和C-QD的直径均约为2-4nm 。我们成功地展示了来自三个IV-QD的非常强的PL发射以及峰值光子能量（E _PHSi-，SiC-和C-QD的峰值峰值波长分别约为1.56eV（800nm），2.5eV（500nm）和3.3eV（380nm）。IV-QDs显示PL特性在很大程度上取决于Si和C原子的热离子剂量以及后N ₂退火过程。因此，易于通过控制注入到SiO ₂层中的Si ⁺和C ⁺的离子剂量来设计峰值PL波长。