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CNFET-Based Ultra-Low-Power Dual- $$V_{DD}$$ V DD Ternary Half Adder
Circuits, Systems, and Signal Processing ( IF 1.8 ) Pub Date : 2021-02-16 , DOI: 10.1007/s00034-021-01664-2
Abhay S. Vidhyadharan , Kasthuri Bha , Sanjay Vidhyadharan

This paper proposes a carbon nanotube FET (CNFET)-based ultra-low-power dual-\(V_{DD}\) ternary half adder (HA) circuit. The proposed design utilizes both the available ternary power supply voltages (\(V_{DD}\) & \(V_{DD}/2\)) and prevents direct path between the power supplies and ground, thus significantly reducing the power dissipation as compared to the conventional designs. The performance of the proposed CNFET dual-\(V_{DD}\) HA has been compared with the same circuit implemented with 45 nm MOSFETs and also with other CNFET-based state-of-the-art HA designs proposed in the literature. The proposed HA consumes merely 86 nW of power which is significantly lesser (66–90% lower) than the power required by other ternary HA designs, and also exhibits 69–91% lower delays. The overall PDP of the proposed HA circuit is merely 4–11% of the PDP of corresponding CMOS ternary HA and other benchmarked CNFET HA designs.



中文翻译:

基于CNFET的超低功耗双路$$ V_ {DD} $$ V DD三元半加法器

本文提出了一种基于碳纳米管FET(CNFET)的超低功耗双\(V_ {DD} \)三元半加法器(HA)电路。拟议的设计同时利用了可用的三态电源电压(\(V_ {DD} \)\(V_ {DD} / 2 \))并防止了电源与地之间的直接路径,从而显着降低了功耗,因为与传统设计相比 拟议的CNFET双(\(V_ {DD} \))的性能HA已与采用45 nm MOSFET实施的同一电路以及文献中提出的其他基于CNFET的最新HA设计进行了比较。提议的HA仅消耗86 nW的功率,这比其他三元HA设计所需的功率要低得多(降低66-90%),并且延迟也要低69-91%。提议的HA电路的整体PDP仅为相应CMOS三元HA和其他基准CNFET HA设计的PDP的4-11%。

更新日期:2021-02-17
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