In this paper we will describe an innovative process flow to build a MIM capacitor, allowing to save several process steps but accounting for all the morphological requirements. The suggested flow is based on the deposition of a sacrificial layer during the top electrode patterning in a dry etching tool. This C-rich film is employed to form disposable spacers, which are requested to reduce the risk of electrical leakage. We will show how the film is deposited and controlled and the benefits given by the suggested sequence.

中文翻译：

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用于构建MIM电容器的一次性C_Spacer流量

在本文中，我们将描述一种构建MIM电容器的创新工艺流程，该工艺流程可以节省多个工艺步骤，但可以满足所有形态要求。建议的流程基于在干法蚀刻工具中进行顶部电极构图时牺牲层的沉积。使用这种富含C的薄膜来形成一次性垫片，以减少漏电的风险。我们将展示薄膜的沉积和控制方式以及建议的顺序所带来的好处。