Abstract

It has been shown that the difference in the structure of electronic orbitals of silicon and germanium atoms is a decisive factor responsible for the formation of porous layers during their electrochemical etching in solutions of hydrofluoric acid.

中文翻译：

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硅和锗能级在氢氟酸溶液中电化学腐蚀过程中的孔形成过程中起决定性作用

摘要

已经表明，硅和锗原子的电子轨道结构的差异是决定在氢氟酸溶液中对多孔层进行电化学蚀刻期间形成多孔层的决定性因素。