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A Decisive Role of Si and Ge Energy Levels in the Process of Pore Formation during Electrochemical Etching in Hydrofluoric Acid Solutions

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Abstract

It has been shown that the difference in the structure of electronic orbitals of silicon and germanium atoms is a decisive factor responsible for the formation of porous layers during their electrochemical etching in solutions of hydrofluoric acid.

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REFERENCES

  1. Handbook of Porous Silicon, Canham, L., Ed., Springer Int. Publ., 2014. https://doi.org/10.1007/978-3-319-05744-6

  2. Lehman, V., Stengl, R., and Luigart, A., Mater. Sci. Eng. B, 2000, vol. 69–70, no. 11/12, pp. 11–22. https://doi.org/10.1016/S0921-5107(99)00286-X

    Article  Google Scholar 

  3. Foll, H., Christophersen, M., Carstensen, J., and Hasse, G., Mater. Sci. Eng.: R, 2002, vol. 39, pp. 93–141. https://doi.org/10.1016/S0927-796X(02)00090-6

    Article  Google Scholar 

  4. Abramova, E.N., Khort, A.M., Yakovenko, A.G., and Shvets V.I., Inorg. Mater., 2015, vol. 51, no. 8, pp. 815–822. https://doi.org/10.7868/S0002337X15080011

    Article  Google Scholar 

  5. Abramova, E.N., Gvelesiani, A.A., Khort, A.M., and Yakovenko, A.G., Russ. J. Inorg. Chem., 2014, vol. 59, no. 11, pp. 1574–1578. https://doi.org/10.7868/S0044457X14110026

    Article  Google Scholar 

  6. Abramova, E.N., Khort, A.M., Yakovenko, A.G., Prokhorov, D.I., and Shvets, V.I., Dokl. Chem., 2017, vol. 473, no. 4. pp. 67–69. https://doi.org/10.1134/S0012500817040012

    Article  CAS  Google Scholar 

  7. Flamand, G., Poortmans, J., and Dessein, R., Phys. Stat. Solidi (c), 2005, no. 9, pp. 3243–3247. https://doi.org/10.1002/pssc.200461130

  8. Stepanov, A.L., Vorob’ev, V.V., Nuzhdin, V.I., Valeev, V.F., and Osin, Yu.N., Pis’ma ZhTF, 2018, vol. 44, no. 8, pp. 84–92. https://doi.org/10.21883/PJTF.2018.08.45971.16808

  9. Akhmetov, N.S., Neorganicheskaya khimiya (Inorganic Chemistry), Moscow: Vysshaya Shkola, 1988.

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Authors and Affiliations

  1. Russian Technology University MIREA, 119454, Moscow, Russia

    A. M. Khort, A. G. Yakovenko, A. A. Dementeva, Yu. V. Syrov &  A. S. Sigov

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  1. A. M. Khort
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  2. A. G. Yakovenko
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  3. A. A. Dementeva
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  4. Yu. V. Syrov
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  5. A. S. Sigov
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Correspondence to A. M. Khort.

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Translated by G. Kirakosyan

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Khort, A.M., Yakovenko, A.G., Dementeva, A.A. et al. A Decisive Role of Si and Ge Energy Levels in the Process of Pore Formation during Electrochemical Etching in Hydrofluoric Acid Solutions. Dokl Chem 495, 178–181 (2020). https://doi.org/10.1134/S001250082011004X

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  • DOI: https://doi.org/10.1134/S001250082011004X

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