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Effect of Total Ionizing Dose Damage on 8-Transistor CMOS Star Sensor Performance
Semiconductors ( IF 0.6 ) Pub Date : 2021-02-03 , DOI: 10.1134/s1063782621010073
J. Feng , Y.-D. Li , J. Fu , L. Wen , C.-F. He , Q. Guo

Abstract

The effects of total ionizing dose (TID) radiation from 60Co gamma-rays on an 8-transistor global shutter exposure complementary metal-oxide semiconductor image sensor (CIS) within a star sensor is presented to analyze the sources of star sensor performance degradation and the decrease of attitude measurement accuracy. The dark current, dark signal non-uniformity, and photon response non-uniformity versus the TID are investigated. The signal-to-noise ratio, star diagonal distance accuracy, and star point centroid positioning accuracy of the star sensor versus the TID are also analyzed. By establishing the correlation between space radiation, CIS noise, and star sensor performance parameters, the transfer mechanism of CIS parameter degradation to star sensor parameter degradation is revealed.



中文翻译:

总电离剂量损伤对8晶体管CMOS星型传感器性能的影响

摘要

提出了来自60 Coγ射线的总电离剂量(TID)辐射对星型传感器内的8晶体管全局快门曝光互补金属氧化物半导体图像传感器(CIS)的影响,以分析星型传感器性能下降的原因和姿态测量精度的降低。研究了暗电流,暗信号不均匀性和光子响应不均匀性与TID的关系。还分析了恒星传感器相对于TID的信噪比,恒星对角线距离精度和恒星点质心定位精度。通过建立空间辐射,CIS噪声和恒星传感器性能参数之间的相关性,揭示了CIS参数降级到恒星传感器参数降级的传递机制。

更新日期:2021-02-03
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