Abstract
The effects of total ionizing dose (TID) radiation from 60Co gamma-rays on an 8-transistor global shutter exposure complementary metal-oxide semiconductor image sensor (CIS) within a star sensor is presented to analyze the sources of star sensor performance degradation and the decrease of attitude measurement accuracy. The dark current, dark signal non-uniformity, and photon response non-uniformity versus the TID are investigated. The signal-to-noise ratio, star diagonal distance accuracy, and star point centroid positioning accuracy of the star sensor versus the TID are also analyzed. By establishing the correlation between space radiation, CIS noise, and star sensor performance parameters, the transfer mechanism of CIS parameter degradation to star sensor parameter degradation is revealed.
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ACKNOWLEDGMENTS
The authors would like to thank the staff at Institute of Optics and Electronics, Chinese Academy of Sciences for their invaluable assistance.
Funding
The work was supported by the National Natural Science Foundation of China under grant no. 11805269, the West Light Foundation of the Chinese Academy of Sciences under grant no. 2016-QNXZ-B-2 and High level talent introduction project of the Autonomous Region under grant no. [2017] 699.
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Feng, J., Li, YD., Fu, J. et al. Effect of Total Ionizing Dose Damage on 8-Transistor CMOS Star Sensor Performance. Semiconductors 55, 108–115 (2021). https://doi.org/10.1134/S1063782621010073
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DOI: https://doi.org/10.1134/S1063782621010073